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| inchange semiconductor product specification silicon npn power transistors 2SC1096 description ? with to-202 package ? low breakdown voltage ? high current ?high f t applications ? for audio frequency power amplifier and low speed switching applications ? suitable for output stages of 3 to 5 watts car radio sets and car stereo pinning(see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 40 v v ceo collector-emitter voltage open base 30 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i cm collector current-peak 6 a i b base current 0.6 a t a =25 ?? 1.2 p c collector power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-202) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1096 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =3a ;i b =0.3a 2.0 v v besat base-emitter saturation voltage i c =3a ;i b =0.3a 2.0 v v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 30 v i cbo collector cut-off current v cb =30v;i e =0 1.0 | a i ebo emitter cut-off current v eb =3v; i c =0 1.0 | a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1.0a ; v ce =5v 40 250 c ob output capacitance i e =0; v cb =10v;f=1.0mhz 55 pf f t transition frequency i c =0.1a ; v ce =5v 65 mhz ? h fe-1 classifications n m l k 40-60 50-100 80-160 120-250 inchange semiconductor product specification 3 silicon npn power transistors 2SC1096 package outline fig.2 outline dimensions |
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